Influence of lattice misfit on crack formation during the epitaxy of In Al1-N on GaN-Reference-Cited by-同舟云学术

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Influence of lattice misfit on crack formation during the epitaxy of In Al1-N on GaN

Published:2022-01 Issue: Volume:890 Page:161797
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Shih Huei-Jyun,Lo Ikai,Wang Ying-Chieh,Tsai Cheng-Da,Yang Hong-Yi,Lin Yu-Chung,Huang Hui-Chun

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference25 articles.

1. Superbright green InGaN single-quantum-well-structure light-emitting diodes;Nakamura;Jpn. J. Appl. Phys.,1995

2. Spin-splitting in an AlxGa1–xN / GaN nanowire for a quantum-ring interferometer;Lo;Appl. Phys. Lett.,2008

3. InGaN/GaN single-quantum-well microdisks;Hsu;Appl. Phys. Lett.,2012

4. Band parameters for nitrogen-containing semiconductors;Vurgaftman;J. Appl. Phys.,2003

5. Phase separation in InGaN grown by metalorganic chemical vapor deposition;El-Masry;Appl. Phys. Lett.,1998

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1. Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs;Nanomaterials;2023-06-23

2. Roles of a strain relaxation and an oxygen vacancy on nanoscale inhomogeneities in VO2 thin film;Current Applied Physics;2023-02

3. Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy;Crystals;2022-03-17

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