A review on GaN-based two-terminal devices grown on Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference227 articles.
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3. High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma-based edge termination;Fu;IEEE Electron Device Lett.,2018
4. Effect of buffer layer design on vertical GaN-on-GaN p-n and Schottky power diodes;Fu;IEEE Electron Device Lett.,2017
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