Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

Published:2012-06 Issue: Volume:526 Page:103-109
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Balaji M.,Claudel A.,Fellmann V.,Gélard I.,Blanquet E.,Boichot R.,Pierret A.,Attal-Trétout B.,Crisci A.,Coindeau S.,Roussel H.,Pique D.,Baskar K.,Pons M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference40 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. High-frequency surface acoustic wave devices based on AlN/diamond layered structure realized using e-beam lithography

3. AlGaN/GaN HEMTs-an overview of device operation and applications

4. Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors

5. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High temperature oxidation of SiC-coated Fe-Cr-Al-Mo alloys in muffle and concentrated solar furnaces;Thin Solid Films;2022-12

2. Adsorption configuration of AlN on sapphire surface using first-principles calculations;Applied Surface Science;2021-10

3. Novel Method for Improving Process Repeatability of the AlN Buffer Layer;Crystal Growth & Design;2021-09-20

4. Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy;Journal of Materials Science: Materials in Electronics;2021-09-20

5. Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures;Coatings;2021-04-20