Thermodynamic assessment of the different steps observed during SiC oxidation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Ceramics and Composites
Reference156 articles.
1. Oxidation behavior of silicon carbide;Ervin;J. Am. Ceram. Soc.,1958
2. Oxidation of silicon carbide in the temperature range 1200 to 1500°;Adamsky;J. Phys. Chem.,1959
3. Oxidation of silicon carbide;Jorgensen;J. Am. Ceram. Soc.,1959
4. The oxidation of silicon carbide at 1150° to 1400°C and at 9x10−3 to 5x10-1 torr oxygen pressure;Gulbransen;J. Electrochem. Soc.,1966
5. High temperature kinetics of the oxidation and nitridation of pyrolytic silicon carbide in dissociated gases;Rosner;J. Phys. Chem.,1970
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