SIMS depth profiling for the characterization of Si-SiO2 structures
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference21 articles.
1. Interface states on semiconductor/insulator surfaces
2. The Current Understanding of Charges in the Thermally Oxidized Silicon Structure
3. Properties of the silicon–SiO2 interface
4. Stoichiometry of thin silicon oxide layers on silicon
5. Low‐energy ion‐scattering spectrometry (ISS) of the SiO2/Si interface
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1. Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2/Si interface by CO annealing;Journal of Applied Physics;2009-07-15
2. The Si–SiO2 interface: Correlation of atomic structure and electrical properties;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1984-04
3. SIMS study of the SiO2/Si interface and of the Si+O2 system;Surface and Interface Analysis;1983-04
4. On the influence of crater edges and neutral beam component on impurity profiles from raster scanning SIMS;Surface and Interface Analysis;1982-12
5. SIMS anlysis of lithium: ion implantation and matrix effects;International Journal of Mass Spectrometry and Ion Physics;1982-03
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