Impedance of humidity sensitive metal/porous silicon/n-Si structures-Reference-Cited by-同舟云学术

Impedance of humidity sensitive metal/porous silicon/n-Si structures

Published:2003-10 Issue:1 Volume:107 Page:1-6
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Yarkin D.G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference17 articles.

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4. E.J. Connolly, G.M.O. O’Halloran, P.J. French, Progress in the optimisation of the porous silicon layer of a capacitive humidity sensor based on porous silicon, in: SAFE–ProRISC–SeSens Proceedings, Veldhoven, 29 November–1 December 2000, pp. 623–626.

5. Humidity sensors using porous silicon layer with mesa structure;Kim;J. Phys. D,2000

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