A two-stack, multi-color In0.5Ga0.5As/GaAs and lnAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection-Reference-Cited by-同舟云学术

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A two-stack, multi-color In0.5Ga0.5As/GaAs and lnAs/GaAs quantum dot infrared photodetector for long wavelength infrared detection

Published:2005-01 Issue:3 Volume:46 Page:249-256
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Jiang Lin,Li Sheng S.,Liu W.-S.,Yeh N.-T.,Chyi J.-I.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K

2. Self-assembled InAs-GaAs quantum-dot intersubband detectors

3. Intersubband absorption from quantum dot superlattice

4. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors

5. Normal incident infrared absorption from InGaAs/GaAs quantum dot superlattice

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1. The impact of quantum dot filling on dual-band optical transitions via intermediate quantum states;Journal of Applied Physics;2015-08-28

2. Quantum dot optoelectronic devices: lasers, photodetectors and solar cells;Journal of Physics D: Applied Physics;2015-08-17

3. The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy;Journal of Theoretical and Applied Physics;2013

4. Quantum Dot Infrared Photodetectors;VLSI Micro- and Nanophotonics;2010-09-22

5. AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In0.5Ga0.5As/GaAs QUANTUM DOTS;Nano;2010-04

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