Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers

Author:

Yamaga Mitsuo,O'Donnell Kevin P.,Sekiguchi Hiroto,Wakahara Akihiro

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference57 articles.

1. Materials Properties, Physics and Growth, Chapters 2 and 4, Vol. 2 Electronic and Optical Processes in Nitrides Chapter 5 and Vol. 3 GaN-based Optical and Electronic Devices Chapers 1 and 2;Morkoc,2009

2. Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications,2010

3. Visible lasing from GaN:Eu optical cavities on sapphire substrates

4. Prospects for rare earth doped GaN lasers on Si

5. Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

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