Molecular dynamics simulation of ultra-precision machining 3C-SiC assisted by ion implantation-Reference-Cited by-同舟云学术

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Molecular dynamics simulation of ultra-precision machining 3C-SiC assisted by ion implantation

Published:2021-09 Issue: Volume:69 Page:398-411
ISSN:1526-6125
Container-title:Journal of Manufacturing Processes
language:en
Short-container-title:Journal of Manufacturing Processes

Author:

Dai Houfu,Hu Yang,Wu Weilong,Yue Haixia,Meng Xiaosong,Li Ping,Duan Huigao

Funder

China Postdoctoral Science Foundation

Guizhou University

Hunan University

Guizhou Science and Technology Department

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Management Science and Operations Research,Strategy and Management

Reference56 articles.

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2. Dependency of the structure of a water layer sandwiched by silicon carbide on shear speed and temperature[J];Lin;J Phys Condens Matter,2020

3. The current understanding on the diamond machining of silicon carbide[J];Goel;J Phys D Appl Phys,2014

4. Step-controlled epitaxial growth of SiC: high quality homoepitaxy[J];Matsunami;Mater Sci Eng R Rep,1997

5. Mechanisms of growth and defect properties of epitaxial SiC[J];Via;Appl Phys Rev,2014

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