Physical properties of gallium nitride and related III–V nitrides
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Elsevier
Reference102 articles.
1. GaN, AIN, and InN: a review;Strite;J. Vac. Sci. Technol. B,1992
2. Crystallographyof epitaxial growth of wurtzite-type thin films on sapphire substrates;Kung;J. Appl. Phys.,1994
3. Properties of Group-IV, III-V and II-VI Semiconductors;Adachi,2005
4. Low temperature growth of GaN and AIN on GaAs utilizing metalorganics and hydrazine;Mizuta;Jpn. J. Appl. Phys.,1986
5. Growth and characterization of cubic GaN;Okumura;J. Cryst. Growth,1997
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