A new edge termination technique for SiC power devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
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3. Sheridan DC, Niu G, Merrett JN, Cressler JD, Dufrene JB, Casady JB et al. Comparison and optimization of edge termination techniques for SiC power devices. In: Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, ISPSD '01, 4–7 June 2001, p. 191–4
4. Bhatnagar M, Nakanishi H, Bothra S, McLarty PK, Baliga BJ. Edge terminations for SiC high voltage Schottky rectifiers. in: Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, ISPSD '93, 18–20 May 1993. p. 89–94
5. Mihaila A, Udrea F, Godignon P, Trajkovic T, Brezeanu G, Rusu A et al. Buried field rings-a novel edge termination method for 4H-SiC high voltage devices. In: Proceedings of the International Semiconductor Conference, CAS 2002, vol. 2, 8–12 October 2002. p. 245–8
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