Author:
Zhou Yunlu,Qin Jian,Xie Zijing,Wang Hong
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference35 articles.
1. A comprehensive computational modeling approach for AlGaN/GaN HEMTs;Joshi;IEEE Trans Nanotechnol,2016
2. A survey of wide bandgap power semiconductor devices;Millan;IEEE Trans Power Electron,2014
3. An overview of normally-off GaN-based high electron mobility transistors;Roccaforte;Materials,2019
4. Recent advances in GaN-based power HEMT devices;He;Adv Electron Mater,2021
5. Zou H, Yang LA, Ma XH, Y. Hao, Effect of jagged field plate structures on DC and RF performance of AlGaN/GaN HEMTs, Semiconductor Sci Technol, 36 (5), 2021, Art no. 055010, doi: 10.1088/1361-6641/abefa3.
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