GDNMOS and GDBIMOS devices for high voltage ESD protection in thin film advanced FD-SOI technology-Reference-Cited by-同舟云学术

GDNMOS and GDBIMOS devices for high voltage ESD protection in thin film advanced FD-SOI technology

Published:2019-09 Issue: Volume:159 Page:90-98
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

De Conti Louise,Bedecarrats Thomas,Cristoloveanu Sorin,Vinet Maud,Galy Philippe

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Benoist T, Galy Ph, Bourgeat J, Jezequel F, Guitard N. Triggerable bidirectional semiconductor device/“Dispositif semiconducteur bidirectionnel déclenchable utilisable sur silicium sur isolant”, patent US8937334B2, priority date 2011-06-15.

2. GDNMOS: a new high voltage device for ESD protection in 28nm UTBB FD-SOI technology;Athanasiou,2016

3. Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology;Athanasiou;Solid-State Electron,2017

4. Toward Gated-Diode-BIMOS for thin silicon ESD protection in advanced FD-SOI CMOS technologies;De Conti,2017

5. GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology;De Conti,2018

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