Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology-Reference-Cited by-同舟云学术

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Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology

Published:2021-12 Issue: Volume:186 Page:108138
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Jha Jaya,Surapaneni Sreenadh,Kumar Akhil S.,Ganguly Swaroop,Saha Dipankar

Funder

Ministry of Electronics and Information technology

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications;Mishra;Proc IEEE,2002

2. On the origin of the two-dimensional electron gas at the AlGaN/GaN heterostructure interface;Koley;Appl Phys Lett,2005

3. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors;Ibbetson;Appl Phys Lett,2000

4. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures;Ambacher;J Appl Phys,2000

5. High RF performance enhancement-mode Al2O3/AlGaN/GaN MIS-HEMTs fabricated with high-temperature gate-recess technique;Huang;IEEE Electron Dev Lett,2015

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scalable GaN-HEMT Model for X-band RF Applications;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

3. A Width-Scalable SPICE Model of GaN-HEMTs for X-band RF Applications;2023

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