Theoretical and numerical investigations of carriers transport in N-semi-insulating-N and P-semi-insulating-P diodes – A new approach
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Bulk growth of GaAs An overview
2. Electrical properties of semi-insulating GaAs crystals grown by vertical gradient freeze and liquid encapsulated Czochralski techniques
3. The concept of screening length in lifetime and relaxation semiconductors
4. Current-Carrier Transport with Space Charge in Semiconductors
5. Minority-carrier injection into semiconductors containing traps
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photocurrent spectra of semi-insulating GaAs M–S–M diodes: Role of the contacts;Solid-State Electronics;2016-04
2. Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes;Solid-State Electronics;2013-02
3. Multiple steady state current–voltage characteristics in drift–diffusion modelisation of N type and semi-insulating GaAs Gunn structures;Solid-State Electronics;2010-12
4. Low energy studies of semiconductor interfaces;Physica B: Condensed Matter;2009-04
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