Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks-Reference-Cited by-同舟云学术

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Characteristics and thermal stability of MOS devices with MoN/TiN and TiN/MoN metal gate stacks

Published:2008-10 Issue:10 Volume:52 Page:1512-1517
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Fu Chung-Hao,Chien Po-Yen,Chang-Liao Kuei-Shu,Wang Tien-Ko,Wu Wen-Fa

Publisher

Elsevier BV

Reference10 articles.

1. High dielectric constant materials: VLSI Mosfet applications;Huff,2004

2. Gate length scaling and threshold voltage control of double-gate MOSFETs

3. A method for measuring barrier heights, metal work functions and fixed charge densities in metal/SiO2/Si capacitors

4. Semiconductor material and device characterization;Schroder,1998

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition of MoNx thin films using a newly synthesized liquid Mo precursor;Journal of Vacuum Science & Technology A;2022-11-15

2. High K / Metal Gate of Short-Channel SOI NMOSFET Research;Advanced Materials Research;2011-11-22

3. High work function metal gate and reliability improvement for MOS device by integration of TiN/MoN and HfAlO dielectric;Solid-State Electronics;2010-10

4. High work function metal gate and reliabitity improvement for MOS device by integration of TiN/MoN and HfAlO dielectirc;2009 International Semiconductor Device Research Symposium;2009-12

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