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Switching and programming dynamics in phase-change memory cells

  • Published:2005-11 Issue:11 Volume:49 Page:1826-1832
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Ielmini D.,Mantegazza D.,Lacaita A.L.,Pirovano A.,Pellizzer F.

Publisher

Elsevier BV

Reference14 articles.

1. Lai S. Future trends of non-volatile memory technology. Intel press release, December 2001.

2. Current status of the phase-change memory and its future;Lai;IEDM Tech Dig,2003

3. Non-volatile memory technologies for beyond 2010;Shin;Symp VLSI Tech Dig,2005

4. nm non-volatile memory cell element technology for stand alone and embedded applications;Lai;IEDM Tech Dig,2001

5. Reliability study of phase-change non-volatile memories;Pirovano;IEEE Trans Dev Mater Reliab,2004

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2. Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event‐Based Pattern Recognition;Advanced Materials;2022-10-07

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