Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Back-gate and series resistance effects in LDMOSFETs on SOI;Vandooren;IEEE Trans Electron Dev,2001
2. RF power performance of an LDMOSFET on high-resistivity SOI;Fiorenza;IEEE Electron Dev Lett,2005
3. A new LDMOSFET with tunneling junction for improved on-state performance;Goyal;IEEE Electron Dev Lett,2013
4. Design and modeling of bulk and SOI power LDMOSFETs for RF wireless applications;Trivedi;Solid-State Electron,2000
5. Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon;Fiorenza;IEEE Trans Electron Dev,2002
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Novel Capacitance Model to Compute Front- and Back-Gate Threshold Voltage of Double Insulating Silicon-on-Diamond MOSFET;Journal of Association of Electrical and Electronics Engineers;2024-03-01
2. A Capacitance Model for Front- and Back-Gate Threshold Voltage Computation of Ultra-Thin-Body and BOX Double-Insulating Silicon-on-Diamond MOSFET;Jordan Journal of Electrical Engineering;2023
3. Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-07-08
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