1. Vertical nanowire and nanosheet FETs: device features, novel schemes for improved process control and enhanced mobility, potential for faster & more energy efficient circuits;Veloso;International Electron Devices Meeting, IEEE Xplore,2019
2. Nanosheet FETs and their potential for enabling continued Moore’s law scaling;Veloso;in Proc. of the 5th IEEE Electron Devices Technol. & Manufact. Conf. (EDTM), IEEE Xplore,2021
3. Diameter scaling of vertical Ge Gate-All-Around nanowire pMOSFETs;Liu;IEEE Trans Electron Devices,2020
4. On the asymmetry of the DC and low-frequency noise characteristics of vertical nanowire pMOSFETs with bulk source contact;Simoen;Proc. EUROSOI-ULIS 2021, IEEE Xplore,2021
5. Impact of processing factors on the low-frequency noise of gate-all-around silicon vertical nanowire FETs;Simoen;ECS Trans.,2021