Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations-Reference-Cited by-同舟云学术

Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations

Published:2023-06 Issue: Volume:204 Page:108626
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kriekouki Ioanna,Beaudoin Félix,Philippopoulos Pericles,Zhou Chenyi,Camirand Lemyre Julien,Rochette Sophie,Rohrbacher Claude,Mir Salvador,Barragan Manuel J.,Pioro-Ladrière Michel,Galy Philippe

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. CMOS-based cryogenic control of silicon quantum circuits;Xue;Nature,2021

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