Funder
Conselho Nacional de Desenvolvimento Científico e Tecnológico
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Review of AlGaN/GaN HEMTs based devices;Nahhas;Am J Nanomater,2019
2. U. Peralagu, A. Alian, V. Putcha, A. Khaled, R. Rodriguez, A. Sibaja-Hernandez, et al., Technical Digest - International Electron Devices Meeting (IEDM), pp. 17.2.1-17.2.4, 2019, doi: 10.1109/IEDM19573.2019.8993582.
3. Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate;Whiteside;Mater Sci Eng B,2021
4. A review of selective area grown recess structure for insulated-gate E-mode GaN transistors;He;Jpn J Appl Phys,2020
5. Normally-off Al2O3/GaN MOSFET: Role of border traps on the device transport characteristics;Wang;Solid State Electron,2018
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献