Heteroepitaxial technologies of III–V on Si
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Elsevier BV
Reference53 articles.
1. Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy
2. Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy
3. Dislocation generation of GaAs on Si in the cooling stage
4. Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices
5. An investigation on surface conditions for Si molecular beam epitaxial (MBE) growth
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