Advances in SiC power MOSFET technology
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Elsevier BV
Reference62 articles.
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3. Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (1120) face;Senzaki;IEEE Electron Dev. Lett.,2002
4. 4H-SiC MOSFETs on (033̄8) face;Hirao;Mater. Sci. Forum,2002
5. Improved channel mobility in normally-off 4H-SiC MOSFETs with buried channel structure;Harada;Mater. Sci. Forum,2002
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