Mechanism of gate voltage spike under digital gate control at IGBT switching operations-Reference-Cited by-同舟云学术

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Mechanism of gate voltage spike under digital gate control at IGBT switching operations

Published:2024-04 Issue: Volume:7 Page:100054
ISSN:2772-3704
Container-title:Power Electronic Devices and Components
language:en
Short-container-title:Power Electronic Devices and Components

Author:

Lou Zaiqi^ORCID,Mamee Thatree,Hata Katsuhiro,Takamiya Makoto,Nishizawa Shin-ichi,Saito Wataru

Publisher

Elsevier BV

Reference17 articles.

1. Equalization of DC and surge components of drain current of two parallel-connected SiC MOSFETs using single-input dual-output digital gate driver IC;Horii,2022

2. Low EMI noise techniques of the 6th generation IGBT module;Igarashi,2007

3. High performance active gate drive for high power IGBTs;John,1998

4. Recent advances and trend of HEV/EV-oriented power semiconductors – an overview;Liu;IET Power Electronics,2020

5. IGBT power module design for suppressing gate voltage spike at digital gate control;Lou;IEEE Access,2023

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