Single- and triple-height-step distributions on Si(111) vicinal surfaces inclined toward [] studied by reflection electron microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. Step bunching, step wandering and faceting: self-organization at Si surfaces
2. Surface phase separation of vicinal Si(111)
3. Temperature dependence of vicinal Si(111) surfaces
4. Step-height-tripling transition on vicinal Si(111)
5. Step-height mixtures on vicinal Si(111) surfaces
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1. Steps and Ge epitaxy on vicinal Si (111) surfaces: An STM study;Surface Science;2020-06
2. TPD characterization of Al-OD-Si sites at the interface of bilayer Al0.42Si0.58O2/Ru(0001) thin-films.;Surface Science;2020-06
3. Toward Lateral Length Standards at the Nanoscale Based on Diblock Copolymers;ACS Applied Materials & Interfaces;2017-04-26
4. Structure of initial Ge nanoclusters at the edges of Si(1 1 1) steps with the front in the 〈−1 −1 2〉 direction;Journal of Crystal Growth;2014-10
5. Scanning tunneling microscopy study of the growth and self-organization of Ge nanostructures on vicinal Si(111) surfaces;Physics of the Solid State;2006-09
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