Metal-induced gap states at InAs(110) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. Schottky barriers and semiconductor band structures
2. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
3. New and unified model for Schottky barrier and III–V insulator interface states formation
4. Formation of metal/GaAs(110) interfaces studied by scanning tunneling microscopy
5. Theoretical approaches to the Schottky barrier problem
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1. 2D electron gas formation on InAs wurtzite nanosheet surfaces;Applied Physics Letters;2024-04-08
2. Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit;ACS Nano;2017-10-09
3. Full loss compensation in hybrid plasmonic waveguides under electrical pumping;Optics Express;2015-07-17
4. Full-Band 3-D Monte Carlo Simulation of InAs Nanowires and High Frequency Analysis;IEEE Transactions on Electron Devices;2015-06
5. Modeling and High-Frequency Simulation of InAs Nanowires;IEEE Transactions on Nanotechnology;2014-07
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