When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature-Reference-Cited by-同舟云学术

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When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature

Published:2023-05 Issue: Volume:249 Page:118820
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Chakraborti Amrita^ORCID,Cho Yeonsoo,Sjakste Jelena^ORCID,Baptiste Benoit,Henry Laura,Guignot Nicolas,Le Godec Yann^ORCID,Vast Nathalie

Funder

Institut Polytechnique de Paris

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference92 articles.

1. Boron compounds, elemental boron and boron carbides;Amberger,1981

2. Displacement damage effects in irradiated semiconductor devices;Srour;IEEE Trans. Nucl. Sci.,2013

3. Order and disorder in boron phases;Favia;Microsc. Microanal. Microstruct.,1996

4. Absence of defect clusters in electron irradiated boron carbide;Stoto;Radiat. Eff.,1985

5. Synthesis of bulk superhard semiconducting B–C material;Solozhenko;Appl. Phys. Lett.,2004

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermodynamical stability of carbon-based defects in α boron from first principles;Solid State Sciences;2024-08

2. Carbon contamination of elemental beta-boron promoted a stable boron carbide by spark plasma sintering;Journal of the European Ceramic Society;2024-08

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