Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing-Reference-Cited by-同舟云学术

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Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

Published:2018-05 Issue: Volume:271 Page:666-676
ISSN:0013-4686
Container-title:Electrochimica Acta
language:en
Short-container-title:Electrochimica Acta

Author:

Yang Xu,Sun Rongyan,Ohkubo Yuji,Kawai Kentaro,Arima Kenta,Endo Katsuyoshi,Yamamura Kazuya

Funder

China Scholarship Council

Publisher

Elsevier BV

Subject

Electrochemistry,General Chemical Engineering

Reference29 articles.

1. Dependence of thin-oxide films quality on surface microroughness;Ohmi;IEEE Trans. Electron. Dev.,1992

2. Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface;Yamamura;Ann. CIRP,2011

3. Atomic-scale flattening mechanism of 4H-SiC (0001) in plasma assisted polishing;Deng;Ann. CIRP,2013

4. Damage-free planarization of 4H-SiC (0001) by catalyst-referred etching;Hara;Mater. Sci. Forum,2007

5. Chemi-mechanical polishing of on-axis semi-insulating SiC substrates;Heydemann;Mater. Sci. Forum,2004

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