Electrical manipulation of magnetization in magnetic heterostructures with perpendicular anisotropy-Reference-Cited by-同舟云学术

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Electrical manipulation of magnetization in magnetic heterostructures with perpendicular anisotropy

Published:2022-11 Issue: Volume:562 Page:169753
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Chen Aitian,Zheng Dongxing,Fang Bin,Wen Yan,Li Yan,Zhang Xi-Xiang

Funder

King Abdullah University of Science and Technology

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference167 articles.

1. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory;Nishimura;J. Appl. Phys.,2002

2. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction;Ikeda;Nat. Mater.,2010

3. Anatomy of spin-transfer torque;Stiles;Phys. Rev. B,2002

4. Spin transfer torques;Ralph;J. Magn. Magn. Mater.,2008

5. Current-induced torques in magnetic materials;Brataas;Nat. Mater.,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrically Controllable Exchange Bias via Interface Magnetoelectric Effect;IEEE Transactions on Magnetics;2023-11

2. Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization;Chinese Physics B;2023-06-01

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