Improvements in thermoelectric features by resonant-tunneling magnetic tunnel junctions with β-Ga2O3 semiconductor-Reference-Cited by-同舟云学术

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Improvements in thermoelectric features by resonant-tunneling magnetic tunnel junctions with β-Ga2O3 semiconductor

Published:2024-06 Issue: Volume:600 Page:172161
ISSN:0304-8853
Container-title:Journal of Magnetism and Magnetic Materials
language:en
Short-container-title:Journal of Magnetism and Magnetic Materials

Author:

Ghobadi Nader,Daqiq Reza^ORCID

Publisher

Elsevier BV

Reference51 articles.

1. Focus on thermoelectric effects in nanostructures;Sanchez;New J. Phys.,2014

2. Foreword;Pichard;C. R. Phys.,2016

3. Thermoelectric efficiency of nanoscale devices in the linear regime;Bevilacqua;Phys. Rev. B,2016

4. Fundamental aspects of steady-state conversion of heat to work at the nanoscale;Beneti;Phys. Rep.,2017

5. Impact of integration spin-transfer torque due to huge thermal gradients in heat-assisted magnetic recording;Dieny;IEEE Trans. Magn.,2018

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-Wide-Bandgap Semiconductor for Improving Resonant Spin-Transfer Torque;SPIN;2025-06-18

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