Combined AFM and Brewster-angle analysis of gradually etched ultrathin SiO2 – Comparison with SRPES results-Reference-Cited by-同舟云学术

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Combined AFM and Brewster-angle analysis of gradually etched ultrathin SiO2 – Comparison with SRPES results

Published:2007-04 Issue:7 Volume:601 Page:1693-1700
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Lublow M.,Lewerenz H.J.

Publisher

Elsevier BV

Reference19 articles.

1. Brewster angle spectroscopy: A new method for characterization of defect levels in semiconductors

2. Defect identification in semiconductors by Brewster angle spectroscopy

3. M. Lublow, Master Thesis, Brandenburg. Techn. Univ., Cottbus (2003).

4. Simultaneous detection of optical constants ε1 and ε2 by Brewster angle reflectivity measurements

5. Real-Time Monitoring of Epitaxial Processes by Parallel-Polarized Reflectance Spectroscopy

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