Quantitative characterization of the Al nanoclustering induced by H interaction with Si(1 0 0)c(4 × 12)-Al surface phase
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Elsevier BV
Reference15 articles.
1. Hydrogen-induced reordering of the Si(111)- × -Ag surface
2. Adsorption of H on : evidence for Ag(111) agglomerates formation
3. Hydrogen interaction with clean and modified silicon surfaces
4. Formation of aSi(100)c(8×2)surface phase using H-induced self-organization and H extraction
5. Cluster-ordered array on the Si(001) surface formed by Al deposition
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1. Influence of the Si(100)-c(4×12)-Al surface phase on formation and electrical properties of thin iron films;Journal of Applied Physics;2010-03-15
2. Electrical Properties of Thin Iron Films Grown on Clean Si(100) and on Si(100)-c(4*12)-Al Surface Phase;e-Journal of Surface Science and Nanotechnology;2009
3. Atomic hydrogen induced gallium nanocluster formation on the Si(1 0 0) surface;Surface Science;2008-05
4. Growth of copper nanoislands on the Si(100)-c(4 × 12)-Al surface studied by scanning tunneling microscopy;Technical Physics Letters;2007-11
5. Growth of In nanocrystallite arrays on the Si(100)-c(4×12)–Al surface;Surface Science;2006-11
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