Concentration of F2 and F3+ defects in He+ implanted LiF crystals determined by optical transmission and photoluminescence measurements-Reference-Cited by-同舟云学术

Concentration of F2 and F3+ defects in He+ implanted LiF crystals determined by optical transmission and photoluminescence measurements

Published:2003-10 Issue:1-2 Volume:24 Page:291-296
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Bonfigli F.,Jacquier B.,Montereali R.M.,Moretti P.,Mussi V.,Nichelatti E.,Somma F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference22 articles.

1. Physics of Colour Centres;Fowler,1968

2. Broad-band active channels induced by electron beam lithography in LiF films for waveguiding devices

3. Active stripe waveguides produced by electron beam lithography in LiF single crystals

4. Optical Effects of Ion Implantation;Towsend,1994

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