Effect of Location of Zero Gauss Plane on Oxygen Concentration at Crystal Melt Interface During Growth of Magnetic Silicon Single Crystal Using Czochralski Technique
Author:
Publisher
Elsevier BV
Subject
General Earth and Planetary Sciences,General Environmental Science
Reference19 articles.
1. The historical development of the Czochralski method;Reinhard;Journal of Crystal Growth,2014
2. Numerical simulation of oxygen transport during the CZ silicon crystal growth process;Teng;J. Cryst. Growth,2011
3. Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal–melt interface during the Czochralski silicon crystal growth;Teng;J. Cryst. Growth,2012
4. Kakimoto Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields.;K.;Journal of Crystal Growth,2001
5. Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic, fields.;Koichi;Journal of Crystal Growth,1996
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1. Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields;Crystals;2023-09-27
2. Design and optimization of large-scale single-crystal furnaces asymmetric hooked magnetic fields;Journal of Physics: Conference Series;2022-10-01
3. Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth;Silicon;2022-09-03
4. Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth;Materials Science in Semiconductor Processing;2021-06
5. Suppression of oxygen and carbon impurity deposition in the thermal system of Czochralski monocrystalline silicon;Journal of Semiconductors;2020-10-01
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