Effect of Location of Zero Gauss Plane on Oxygen Concentration at Crystal Melt Interface During Growth of Magnetic Silicon Single Crystal Using Czochralski Technique-Reference-Cited by-同舟云学术

Effect of Location of Zero Gauss Plane on Oxygen Concentration at Crystal Melt Interface During Growth of Magnetic Silicon Single Crystal Using Czochralski Technique

Published:2016 Issue: Volume:23 Page:480-487
ISSN:2212-0173
Container-title:Procedia Technology
language:en
Short-container-title:Procedia Technology

Author:

Vegad Mitesh,Bhatt N.M.

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference19 articles.

1. The historical development of the Czochralski method;Reinhard;Journal of Crystal Growth,2014

2. Numerical simulation of oxygen transport during the CZ silicon crystal growth process;Teng;J. Cryst. Growth,2011

3. Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal–melt interface during the Czochralski silicon crystal growth;Teng;J. Cryst. Growth,2012

4. Kakimoto Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields.;K.;Journal of Crystal Growth,2001

5. Oxygen transfer during single silicon crystal growth in Czochralski system with vertical magnetic, fields.;Koichi;Journal of Crystal Growth,1996

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1. Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields;Crystals;2023-09-27

2. Design and optimization of large-scale single-crystal furnaces asymmetric hooked magnetic fields;Journal of Physics: Conference Series;2022-10-01

3. Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth;Silicon;2022-09-03

4. Effects of different cusp magnetic ratios and crucible rotation conditions on oxygen transport and point defect formation during Cz silicon crystal growth;Materials Science in Semiconductor Processing;2021-06

5. Suppression of oxygen and carbon impurity deposition in the thermal system of Czochralski monocrystalline silicon;Journal of Semiconductors;2020-10-01