Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference16 articles.
1. Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling
2. Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si
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5. The Stopping and Ranges of Ions in Solids;Ziegler,1985
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2. Selective nucleation induced by defect nanostructures: A way to control cobalt disilicide precipitation during ion implantation;Journal of Applied Physics;2012-12-15
3. The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy;Journal of Applied Physics;2011-07
4. Activation energies for vacancy migration, clustering and annealing in silicon;Journal of Physics: Conference Series;2011-01-10
5. Nanocluster and Nanovoid Formation by Ion Implantation;Ion Beams in Nanoscience and Technology;2009
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