First-principles study of novel triple-gate field-effect transistors based on 2D TMDs-Reference-Cited by-同舟云学术

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First-principles study of novel triple-gate field-effect transistors based on 2D TMDs

Published:2025-01 Issue: Volume:6 Page:100303
ISSN:2949-8228
Container-title:Next Materials
language:en
Short-container-title:Next Materials

Author:

He Jiajian,Mei Wei^ORCID,Hu Lianghua,Ou Likai^ORCID,Lian Yaoyang^ORCID,Chen Mingan^ORCID,Dou Liuming^ORCID

Publisher

Elsevier BV

Reference36 articles.

1. International Technology Roadmap for Semiconductors (2013)[OL]. 〈http://www.itrs2.net〉.

2. First principle study of doped graphene for FET applications[J];Narendar;Silicon,2019

3. Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors[J];Quhe;Phys. Rev. Appl.,2018

4. Mechanically controllable break junctions for molecular electronics[J];Xiang;Adv. Mater.,2013

5. Nanomaterials in transistors: From high-performance to thin-film applications[J];Franklin;Sci. (N. Y., N. Y. ),2015

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