Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction-Reference-Cited by-同舟云学术

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Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction

Published:2009-07 Issue:1-3 Volume:476 Page:69-72
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Chen Chih-Han,Chang Shoou-Jinn,Chang Sheng-Po,Li Meng-Ju,Chen I-Cherng,Hsueh Ting-Jen,Hsu Cheng-Liang

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference19 articles.

1. AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates

2. Hydrogenated amorphous silicon ultraviolet sensor for deoxyribonucleic acid analysis

3. Inverted photovoltaic device based on ZnO and organic small molecule heterojunction

4. A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications

5. Highly efficient and stable photoluminescence from silicon nanowires coated with SiC

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