Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure-Reference-Cited by-同舟云学术

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Polyimide-isolated ridge waveguide InGaN/GaN laser diodes based on back-ward exposure

Published:2016-03 Issue: Volume:91 Page:313-318
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Meng Linghai,Kang Xiangning,Wang Ping,Yan Tongxing,Ma Jian,Lu Cimang,Liu Ningyang,Wu Yong,Liu Shiyu,Wang Jingshen,Hu Xiaodong

Funder

National Natural Science Foundation of China

High Technology Program of China

National Basic Research Program of China

Guangdong Innovative Research Team Program

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature;Zhang;Chin. Phys. Lett.,2008

2. Characteristics of InGaN multiple quantum well blue-violet laser diodes;Li;Sci. Chin. Ser. E,2006

3. GaN-based blue laser diodes grown on SiC substrate as light source of high-density optical data storage;Kuramata;J. Fujitsu Sci. Tech.,1998

4. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates;Nakamura;Appl. Phys. Lett.,1998

5. Optical disk recording using a GaN blue-violet laser diode;Ichimura;J. Appl. Phys.,2000

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exploration of photosensitive polyimide as the modification layer in thin film microcircuit;Journal of Semiconductors;2018-02

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