An analysis of the effect of nitrogen and a screened (by free carriers) Coulomb field on the binding energy of hydrogenic shallow donors in GaInAsN-Reference-Cited by-同舟云学术

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An analysis of the effect of nitrogen and a screened (by free carriers) Coulomb field on the binding energy of hydrogenic shallow donors in GaInAsN

Published:2010-06 Issue:6 Volume:47 Page:676-684
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Köksal Koray,Gönül Beşire

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Derivation of a 10-band model for dilute nitride semiconductors

2. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03

3. Analysis of the band alignment of highly strained indium-rich GaInNAs QWs on InP substrates

4. Trends in the electronic structure of dilute nitride alloys

5. Semiconductor Physics: An Introduction;Seeger,2004

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A simple analytical expression for bound state energies for an attractive Gaussian confining potential;Physica Scripta;2012-08-30

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