The effect of DUV-O2 doping on WSe2 FET for sensing applications: Experimental and theoretical approach-Reference-Cited by-同舟云学术

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The effect of DUV-O2 doping on WSe2 FET for sensing applications: Experimental and theoretical approach

Published:2021-12 Issue: Volume: Page:107127
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Iqbal Muhammad Waqas,Manzoor Mumtaz,Islam Ayaz,Noor N.A.,Aftab Sikander,Rahman Altaf Ur,Zahid Tausif

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference44 articles.

1. The rise of graphene, nature materials;Geim,2007

2. Tuning optical properties of graphene/WSe2 heterostructure by introducing vacancy: first Principles Calculations;Qiu;Phys. E Low-dimens. Syst. Nanostruct.,2020

3. A facile route to enhance the mobility of MoTe2 field effect transistor via chemical doping;Iqbal,2020

4. A review on Raman finger prints of doping and strain effect in TMDCs;Iqbal,2020

5. Electrically tunable excitonic light-emitting diodes based on monolayer WSe 2 p–n junctions;Ross,2014

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1. Modeling of ZrS2/MoS2 Heterostructures for Photovoltaic Applications;Journal of Electronic Materials;2024-04-20

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