Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective-Reference-Cited by-同舟云学术

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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective

Published:2006-10 Issue:4-6 Volume:40 Page:195-200
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Müller St.G.,Brady M.F.,Burk A.A.,Hobgood H.McD.,Jenny J.R.,Leonard R.T.,Malta D.P.,Powell A.R.,Sumakeris J.J.,Tsvetkov V.F.,Carter C.H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects

2. Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices

3. SiC power-switching devices-the second electronics revolution?

4. The status of SiC bulk growth from an industrial point of view

5. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

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2. On-axis Si-face 4H-SiC epitaxial growth with enhanced polytype stability by controlling micro-steps during the H2 etching process;CrystEngComm;2017

3. Kinetics of the thermal decomposition of tetramethylsilane behind the reflected shock waves between 1058 and 1194 K;Journal of Chemical Sciences;2016-02-13

4. Design of a high temperature chemical vapor deposition reactor in which the effect of the condensation of exhaust gas in the outlet is minimized using computational modeling;Journal of Crystal Growth;2016-02

5. High Quality 150 mm 4H SiC Wafers for Power Device Production;Materials Science Forum;2015-06

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