Donor impurity states in zinc-blende GaN/AlGaN quantum well: Quantum confinement and laser-dressed effects
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
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1. The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells;Journal of Nanoelectronics and Optoelectronics;2021-01-01
2. Magnetopolaron effect on shallow-impurity states in the presence of magnetic and intense terahertz laser fields in the Faraday configuration;Physical Review B;2018-02-26
3. Excitations in doped quantum dot insisted by discontinuous reversals of static electric field: Interplay between pulse and dopant site;Superlattices and Microstructures;2012-01
4. Interplay between size and impurity position of doped quantum dot;Superlattices and Microstructures;2011-07
5. Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well;Physics Letters A;2011-07
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