Fabrication and photoluminescence enhancement of InGaN/GaN multiple-quantum-well nanotube structures-Reference-Cited by-同舟云学术

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Fabrication and photoluminescence enhancement of InGaN/GaN multiple-quantum-well nanotube structures

Published:2018-10 Issue: Volume:122 Page:46-56
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Wang Qiang,Li Kuilong,Liu Meng

Funder

Shandong Province Higher Educational Science and Technology Program in China

Natural Science Foundation of Shandong Province in China

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. Toward smart and ultra-efficient solid-state lighting;Tsao;Adv. Opt. Mater,2014

2. White light-emitting diodes: history, progress, and future;Cho;Laser Photon. Rev.,2017

3. Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures;Langer;Appl. Phys. Lett.,2013

4. Dislocation related droop in InGaN/GaN light emitting diodes investigated via cathodoluminescence;Pozina;Appl. Phys. Lett.,2015

5. Control of quantum-confined Stark effect in InGaN-based quantum wells;Ryou;IEEE J. Sel. Top. Quant. Electron.,2009

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1. Enhancement of the bandgap emission from GaN epilayer by surface plasmon resonance in the quadrupole oscillation mode using Ag nanoparticles protected by an oxide thin film;Applied Physics Letters;2023-04-10

2. Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells;Results in Physics;2023-03

3. Field emission of GaN nanofilms on Si substrates enhanced by hydrogen plasma treatment;Surface Topography: Metrology and Properties;2021-02-03

4. Zeeman splitting, Zeeman transitions and optical absorption of an electron confined in spherical quantum dots under the magnetic field;Philosophical Magazine;2020-09-24

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