Modelling of fin width dependent threshold voltage in fin shaped nano channel AlGaN/GaN HEMT
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. AlGaN/GaN HEMTs - An overview of device operation and applications;Mishra;Proc. IEEE,2002
2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures;Ambacheret;J. Appl. Phys.,1999
3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in undoped and doped AlGaN/GaN heterostructures;Ambacher;J. Appl. Phys.,2000
4. Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode;Cai;IEEE Electron. Device Lett.,2006
5. Recessed-gate enhancement-mode GaN HEMT with high threshold voltage;Lanfor;IEEE Electron. Device Lett.,2005
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DC and RF performance analysis of enhancement mode fin-shaped tri-gate AlGaN/GaN HEMT and MOSHEMT with ultra-thin barrier layer;Physica Scripta;2024-06-12
2. Barrier and channel thickness engineering to optimize fin height for enhancement mode Al0.3Ga0.7N/GaN FinHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-12-14
3. RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate;Silicon;2022-01-13
4. E-mode All-GaN-Integrated cascode MISHEMT with GaN/InAlGaN/GaN backbarrier for high power switching performance: Simulation study;Superlattices and Microstructures;2021-12
5. Tri-Gate GaN Junction HEMTs: Physics and Performance Space;IEEE Transactions on Electron Devices;2021-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3