Development of an Indium bump bond process for silicon pixel detectors at PSI-Reference-Cited by-同舟云学术

Development of an Indium bump bond process for silicon pixel detectors at PSI

Published:2006-09 Issue:1 Volume:565 Page:303-308
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Broennimann Ch.,Glaus F.,Gobrecht J.,Heising S.,Horisberger M.,Horisberger R.,Kästli H.C.,Lehmann J.,Rohe T.,Streuli S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference7 articles.

1. The CMS Collaboration, CMS Tracker, Technical Design Report LHCC 98-6, CERN, Geneva, Switzerland, 1998.

3. P. Riedler, et al., Overview and status of the ALICE silicon pixel detector, these proceedings.

4. G. Alimonti, et al., Analysis of the production of ATLAS pixel modules with indium, these proceedings.

5. T. Fritzsch, Experiences in fabrication of multichip-modules for the atlas pixel detector, these proceedings.

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