SiPM understanding using simple Geiger-breakdown simulations-Reference-Cited by-同舟云学术

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SiPM understanding using simple Geiger-breakdown simulations

Published:2024-05 Issue: Volume:1062 Page:169233
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Klanner R.^ORCID,Schwandt J.^ORCID

Publisher

Elsevier BV

Reference16 articles.

1. Study of the breakdown voltage of SiPMs;Chmill;Nucl. Instrum. Methods A,2016

2. Passive quenching, signal shapes and space charge effects in SPADs and SiPMs;Windischhofer;Nucl. Instrum. Methods A,2023

3. S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons.

4. Study of imapct ionization coefficients in silicon with low gain avalanche diodes;Rivera;IEEE Trans. Electron Devices,2023

5. A new look at impact ionization – Part I: A theory of gain, noise, breakdown probability, and frequency responnse;McIntyre;IEEE Trans. Electron Devices,1999

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