Uniaxial-strain effects on n = 1 free-exciton and free-carrier lines in GaAs
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference12 articles.
1. Piezo-Electroreflectance in Ge, GaAs, and Si
2. Direct edge piezo-reflectance in Ge and GaAs
3. Stress Dependence of Photoluminescence in GaAs
4. Free-Carrier and Exciton Recombination Radiation in GaAs
5. Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAs
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1. Optical anisotropy in GaN grown onto A–plane sapphire;Materials Science and Engineering: B;1999-05
2. Excitonic exchange splitting in bulk semiconductors;Physical Review B;1999-02-15
3. Lattice parameter variation in doped GaAs substrates determined using high resolution photoluminescence spectroscopy;Journal of Applied Physics;1998-12
4. Determination of the spin-exchange interaction constant in wurtzite GaN;Physical Review B;1998-03-15
5. Photoluminescence spectroscopy of crystalline semiconductors;Materials Science and Engineering: R: Reports;1997-03
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