GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction-Reference-Cited by-同舟云学术

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GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

Published:2017-07 Issue: Volume:92 Page:95-100
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Zhou Shengjun,Zheng Chenju,Lv Jiajiang,Gao Yilin,Wang Ruiqing,Liu Sheng

Funder

National Natural Science Foundation of China

National High-tech R&D Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Enhanced light extraction efficiency of integrated LEDs devices 7with the taper holes microstructures arrays;Huang;Opt. Laser Technol.,2015

2. Optical design of LED-based automotive headlamps;Zhu;Opt. Laser Technol.,2013

3. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination;Nakamura;Proc. IEEE,2013

4. Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer;Huh;J. Appl. Phys.,2002

5. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer;Zhou;Appl. Surf. Sci.,2015

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3. Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate;Materials Science in Semiconductor Processing;2024-04

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5. Improved Efficiency Droop of 370 nm UV LEDs with ITO/Au/ITO Structure;ECS Journal of Solid State Science and Technology;2023-09-01

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