Impurity photoluminescence in GaAs/Ga1−xAlxAs multiple quantum wells-Reference-Cited by-同舟云学术

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Impurity photoluminescence in GaAs/Ga1−xAlxAs multiple quantum wells

Published:1982-08 Issue:6 Volume:43 Page:443-446
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Lambert B.,Deveaud B.,Regreny A.,Talalaeff G.

Publisher

Elsevier BV

Reference11 articles.

1. Proc. 13th Int. Conf. Physics of Semiconductors. Ed. North-Holland;Dingle,1976

2. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures

3. Luminescence from InAsGaSb superlattices

4. Luminescence properties of GaAs-Ga1−x Alx As double heterostructures and multiquantum-well superlattices grown by molecular beam epitaxy

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1. Shallow impurity properties of EuS/PbS/EuS finite confining potential quantum well;Physica E: Low-dimensional Systems and Nanostructures;2011-11

2. Donor states in modulation-doped Si/SiGe heterostructures;Physical Review B;2003-10-24

3. Photoluminescence spectra of MOCVD-grown P-doped GaAS/Al x Ga1−x As MQW;Applied Physics A Materials Science & Processing;1996-01

4. Intrinsic and extrinsic radiative recombination processes in quantum wells;Journal of Luminescence;1995-06

5. Optical Characterization of Compound Semiconductors;Handbook of Compound Semiconductors;1995

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