Reactive ion etching of sol–gel-processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes-Reference-Cited by-同舟云学术

Reactive ion etching of sol–gel-processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes

Published:2002-03 Issue:1-3 Volume:127 Page:207-211
ISSN:0379-6779
Container-title:Synthetic Metals
language:en
Short-container-title:Synthetic Metals

Author:

Vaufrey D,Ben Khalifa M,Besland M.P,Sandu C,Blanchin M.G,Teodorescu V,Roger J.A,Tardy J

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Importance of indium tin oxide surface acido basicity for charge injection into organic materials based light emitting diodes

2. Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium–tin–oxide anodes

3. Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes

4. Dependence of indium–tin–oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopies

5. Preparation of transparent and conductive In2O3–ZnO films by radio frequency magnetron sputtering

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